Advances in Au/Sn Target Materials
During the past several years, Materion Microelectronics & Services has provided consistent and homogeneous 80Au20Sn targets and evaporation material. The materials are used for low film resistivity backside wafer metallization and more importantly, for backside solder thin films used in discrete elements for wafer support (wafer chip soldering).
Recent developments in the fiber-optic component market have given Materion Microelectronics & Services the opportunity to expand and support the shift from pick and place AuSn preforms to thin films already deposited on the substrate. This new emerging alternative on opto-electronic devices allows complex solder pad geometry as well as thinner coatings.
AuSn Targets and Evaporation Material
Materion Microelectronics & Services AuSn targets and evaporation material offer the highest level of homogenous compositional structure possible. Small metallurgical grain size and a homogeneous structure are key PVD characteristics for optimal process yields and film performance (i.e. deposition rate and film uniformity). Due to the brittle nature of AuSn alloys, state-of-the-art casting technology has been designed for optimal grain size and the elimination of material segregation.
Materion Microelectronics & Services has also developed other AuSn alloys to compensate for preferential sputtering and/or evaporation. Off eutectic alloy compositions have been determined and tested to adjust to certain processes where Au heavy films were produced.
At Materion Microelectronics & Services, we offer in-house refining and recycling capabilities allowing our customers to recover their used and spent material as fast as possible. Our refining and recycling services run an average of five days to minimize customers’ material inventory as well as meet current and future production demands.
With a commitment to continuous process development and material management, Materion Microelectronics & Services Gold Tin (AuSn) material and refining services continue to improve the manufacturing of discrete elements in emerging IC technologies.