MRAM Technology Review

Magnetoresistive random access memory (MRAM) is a breakthrough memory storage technology that will be used in computers and handheld devices. It has many benefits over the current memory devices available, and will likely begin replacing them in the next few years. 

• Products Used - PureCON™, ME™

Typical MRAM materials are: 

• NiFe, NiFeCo, CoFe, Co, Cu, Ta, Ti, Zr, Au, Ru, Cr, CoPt, CoCrPt, Al(2)O(3), SiO(2), FeNi, FeTa, FeTaCr, FeAl, FeZr, NiFeCr, NiFeX. 

Antiferromagnetic materials are:

• FeMn, MnNi, MnPt, MnIr, and MnPdPt. 

How does MRAM work? 

MRAM functions by changing the “spin” of electrons in thin film layers of magnetic material. If both layers have the same spin, resistance between them is low. The resistance is high if the layers have opposite spins. Resistance can be switched from low to high magnetically to store the 1’s and 0’s of digital data. 

Unlike conventional RAM, MRAM will store data after the power is shut off. Computers could be turned on instantly because the information necessary for boot up is already stored. MRAM will also be compact, use less power, and resist high levels of radiation. This technology could replace conventional RAM, EEPROM and FLASH memory and may replace other forms of data storage. 

Schematic Diagram